SI2200-X-GM SILABS [Silicon Laboratories], SI2200-X-GM Datasheet - Page 9

• Manufacturer Part Number: SI2200-X-GM
• Description: RF SYNTHESIZER WITH INTEGRATED VCOS INTEGRATED VCOS
• Manufacturer: SILABS [Silicon Laboratories]

Table 5. RF and IF Synthesizer Characteristics (Continued)
(V
Parameter
RF1 Harmonic Suppression
RF2 Harmonic Suppression
IF Harmonic Suppression
RFOUT Power Level
RFOUT Power Level
IFOUT Power Level
RF1 Output Reference Spurs
RF2 Output Reference Spurs
Powerup Request to Synthesizer Ready
Time
Powerup Request to Synthesizer Ready
Time
Powerdown Request to Synthesizer Off
Time
Notes:
DD
1. f
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From powerup request (PWDN↑ or SEN↑ during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
4. From powerdown request (PWDN↓, or SEN↑ during a write of 0 to bits PDIB and PDRB in Register 2) to supply current
= 2.7
synthesizers ready (settled to within 0.1 ppm frequency error).
equal to I
φ
(RF)
to 3.6 V, T
1
=
1 MHz, f
PWDN
A
.
=
φ
–40 to 85 °C)
(IF)
=
1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0.
4
3
3
Symbol
t
t
t
pup
pup
pdn
Z
Z
Rev. 1.0
L
L
Second Harmonic
= 50 Ω, RF1 active
= 50 Ω, RF2 active
Offset = 2 MHz
Offset = 3 MHz
Offset = 2 MHz
Offset = 3 MHz
Offset = 1 MHz
Offset = 1 MHz
Test Condition
f
f
Figures 4, 5
Figures 4, 5
Figures 4, 5
φ
φ
Z
> 500 kHz
≤ 500 kHz
L
= 50 Ω
Min
–3
–3
–8
—
—
—
—
—
—
—
—
—
—
—
—
40/f
–28
–23
–26
–63
–68
–70
–63
–68
–70
Typ
–1
–1
–4
80
—
φ
50/f
Max
–20
–20
–20
100
100
—
—
—
—
—
—
Si2200
3
3
0
φ
dBm
dBm
dBm
Unit
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
µs
ns
9