IRF7805QPBF IRF [International Rectifier], IRF7805QPBF Datasheet

no-image

IRF7805QPBF

Manufacturer Part Number
IRF7805QPBF
Description
Manufacturer
IRF [International Rectifier]
Datasheet
l
l
l
l
l
l
l
l
Description
Specifically designed for Automotive applications, these
HEXFET
processing techniques to achieve extremely low
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
www.irf.com
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
@T
@T
A
A
A
A
®
= 25°C
= 70°C
= 25°C
= 70°C
Power MOSFET's in package utilize the lastest
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
e
e
eh
in Tape & Reel.
h
GS
GS
@ 10V
@ 10V
on-
Typ.
–––
–––
SO-8
IRF7805QPbF
V
R
Qg
Qsw
Qoss
DS
DS(on)
-55 to + 150
Device Features
Max.
0.02
± 12
100
2.5
1.6
30
13
10
IRF7805Q
30V
11mΩ
31nC
11.5nC
36nC
Max.
20
50
G
S
S
S
1
2
3
4
T o p V ie w
PD – 96114
Units
Units
W/°C
°C/W
°C
07/23/07
W
V
A
8
7
6
5
D
D
D
D
A
1

Related parts for IRF7805QPBF

IRF7805QPBF Summary of contents

Page 1

... Junction-to-Drain Lead R θJL Junction-to-Ambient R θJA www.irf.com SO-8 on- in Tape & Reel. @ 10V GS @ 10V Typ. h ––– eh ––– PD – 96114 IRF7805QPbF Device Features IRF7805Q V 30V DS R 11mΩ DS(on) ...

Page 2

... IRF7805QPbF Static @ T = 25°C (unless otherwise specified) J Parameter Drain-to-Source Breakdown Voltage BV DSS Static Drain-to-Source On-Resistance R DS(on) Gate Threshold Voltage V GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Total Gate Charge Pre-Vth Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage 150 0.1 0.4 0 Fig 4. Typical Source-Drain Diode Forward Voltage Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRF7805QPbF ° ° 0.6 0.7 0.8 0.9 ,Source-to-Drain Voltage ( ...

Page 4

... IRF7805QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $à ...

Page 5

... Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ This product has been designed and qualified for the Automotive [Q101] market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRF7805QPbF 12.3 ( .484 ) 11.7 ( .461 ) FEED DIRECTION 14 ...

Related keywords