IRF7805QPBF IRF [International Rectifier], IRF7805QPBF Datasheet - Page 2

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IRF7805QPBF

Manufacturer Part Number
IRF7805QPBF
Description
Manufacturer
IRF [International Rectifier]
Datasheet
IRF7805QPbF
Notes:

ƒ
2
BV
R
V
I
I
Q
Q
Q
R
t
t
t
t
I
I
V
Q
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
DS(on)
GS(th)
G
SD
g
sw
oss
rr
rr(s)
Q
Q
Q
DSS
gs1
gs2
gd
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
R
Devices are 100% tested to these parameters.
θ
is measured at T
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Charge
(with Parallel Schottky)
J
= 25°C (unless otherwise specified)
Parameter
J
oss
of approximately 90°C.
Ù
Parameter
gs2
+ Q
f
gd
)
f
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
0.5
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.2
3.7
1.4
6.8
8.2
3.0
22
16
20
38
16
88
55
-100
11.5
–––
150
100
–––
–––
–––
–––
–––
–––
–––
106
–––
–––
3.0
3.6
1.7
2.5
1.2
11
70
10
31
mΩ
µA
nA
nC
nC
nC
ns
ns
V
V
A
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
R
Resistive Load
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
di/dt = 700A/µs
V
di/dt = 700A/µs (with 10BQ040)
V
D
D
J
GS
GS
DS
DS
DS
DS
GS
GS
GS
DS
DS
DD
DS
DS
G
= 7.0A
= 7.0A
= 2Ω
= 25°C, I
= 0V, I
= 4.5V, I
= V
= 30V, V
= 24V, V
= 24V, V
= 12V
= -12V
= 5.0V
= 16V
= 16V, V
= 16V, V
= 16V, V
= 16V, V
GS
, I
D
Conditions
Conditions
D
S
= 250µA
D
GS
GS
GS
GS
GS
= 250µA
GS
GS
= 7.0A, V
= 7.0A
= 0V
= 0V
= 0V, T
= 0V
= 4.5V
= 0V, I
= 0V, I
www.irf.com
d
e
GS
J
S
S
= 100°C
= 7.0A
= 7.0A
= 0V

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