IRF7N60FP SUNTAC [Suntac Electronic Corp.], IRF7N60FP Datasheet

IRF7N60FP

Manufacturer Part Number

IRF7N60FP

Description

POWER MOSFET

Manufacturer

SUNTAC [Suntac Electronic Corp.]

Datasheet

1.IRF7N60FP.pdf (6 pages)

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(1) Pulse Width and frequency is limited by TJ(max) and thermal response

GENERAL DESCRIPTION

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

PIN CONFIGURATION

ABSOLUTE MAXIMUM RATINGS

Drain to Current

Gate-to-Source Voltage

Total Power Dissipation

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy

Thermal Resistance

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

TO-220

TO-220FP

= 100V, V

= 10V, I

Pulsed

TO-220/TO-220FP

Continuous

Front View

Junction to Case

Junction to Ambient

= 7A, L = 10mH, R

Continue

Non-repetitive

Rating

= 25 )

= 25

FEATURES

‹

SYMBOL

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

DSS

Specified at Elevated Temperature

N-Channel MOSFET

Symbol

, T

GSM

STG

POWER MOSFET

-55 to 150

Value

62.5

±20

±40

147

245

260

7.0

1.0

IRF7N60

Unit

Page 1

Related parts for IRF7N60FP

IRF7N60FP Summary of contents

Page 1

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy ...

Page 2

... ORDERING INFORMATION Part Number IRF7N60...............................................TO-220 ....................IRF7N60FP ELECTRICAL CHARACTERISTICS Unless otherwise specified Characteristic Drain-Source Breakdown Voltage ( 250 Drain-Source Leakage Current (V = 600 480 125 ) Gate-Source Leakage Current-Forward ( gsf DS Gate-Source Leakage Current-Reverse ...

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IRF7N60FP datasheet download

IRF7N60FP SUNTAC [Suntac Electronic Corp.], IRF7N60FP Datasheet

IRF7N60FP

Related parts for IRF7N60FP

IRF7N60FP Summary of contents

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