IRLW/I520A FAIRCHILD [Fairchild Semiconductor], IRLW/I520A Datasheet - Page 2

• Manufacturer Part Number: IRLW/I520A
• Description: Advanced Power MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

IRLW/I520A
ΔBV/ΔT
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=2mH, I
③ I
④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
R
BV
V
C
t
t
V
I
I
C
C
Q
Q
I
Q
GS(th)
DS(on)
d(on)
d(off)
GSS
DSS
g
Q
I
SM
t
t
t
S
SD
rr
oss
SD
rss
DSS
iss
fs
r
f
gs
gd
rr
g
≤9.2A, di/dt≤300A/μs, V
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(＂Miller＂) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=9.2A, V
Characteristic
DD
Characteristic
=25V, R
DD
G
=27
≤BV
Ω
DSS
, Starting T
(T
, Starting T
C
=25℃ unless otherwise specified)
①
④
J
=25℃
Min.
Min.
100
1.0
J
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=25℃
Typ.
Typ.
10.2
0.34
340
0.1
7.7
1.7
6.0
90
39
10
19
98
--
--
--
--
--
--
--
--
--
--
5
9
Max. Units
Max. Units
-100
0.22
100
100
440
115
2.0
9.2
1.5
50
20
30
50
30
15
32
10
--
--
--
--
--
--
--
V/℃
μA
μC
nA
nC
Ω
Ω
pF
ns
ns
V
V
A
V
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
=250μA
G
=9.2A
F
=25℃,I
=25℃,I
/dt=100A/μs
=9Ω
=0V,I
=5V,I
=20V
=-20V
=100V
=80V,T
=5V,I
=40V,I
=0V,V
=50V,I
=80V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
POWER MOSFET
N-CHANNEL
D
D
D
S
F
DS
=250μA
=250μA
=4.6A
D
D
=9.2A,V
=9.2A
C
GS
=4.6A
=9.2A,
=25V,f =1MHz
=150℃
=5V,
See Fig 7
GS
=0V
④
④ ⑤
④ ⑤
④
④
2