IRLW/I520A FAIRCHILD [Fairchild Semiconductor], IRLW/I520A Datasheet - Page 4

• Manufacturer Part Number: IRLW/I520A
• Description: Advanced Power MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

IRLW/I520A
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
@ N o t e s :
- 5 0
1 . T
2 . T
3 . S i n g l e P u l s e
C
J
Fig 9. Max. Safe Operating Area
= 2 5
= 1 7 5
- 2 5
T
V
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
o
J
DS
C
o
C
, Junction Temperature [
0
, Drain-Source Voltage [V]
10
10
- 1
2 5
0
10
- 5
1 0
0.05
0.02
0.01
0.1
D=0.5
0.2
5 0
DS(on)
1
D C
7 5
1 0 m s
10
t
1 0 0
single pulse
1
- 4
, Square Wave Pulse Duration
@ N o t e s :
1 2 5
1 . V
2 . I
o
C]
1 m s
1 0 0 s
GS
D
1 5 0
= 2 5 0 A
= 0 V
Fig 11. Thermal Response
1 0
10
2
1 7 5
- 3
2 0 0
10
- 2
@ Notes :
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
1. Z
2. Duty Factor, D=t
3. T
1 0
Fig 10. Max. Drain Current vs. Case Temperature
8
6
4
2
0
- 7 5
2 5
P
DM
J M
J C
-T
10
- 5 0
(t)=3.04
Fig 8. On-Resistance vs. Temperature
- 1
C
=P
5 0
t
- 2 5
D M
1
t
*Z
T
2
J
T
[sec]
, Junction Temperature [
0
o
J C
c
C/W Max.
, Case Temperature [
(t)
7 5
10
1
/t
2 5
0
2
5 0
1 0 0
POWER MOSFET
7 5
N-CHANNEL
10
1
1 0 0
1 2 5
@ N o t e s :
o
1 2 5
C]
1 . V
2 . I
o
C]
GS
D
1 5 0
= 4 . 6 A
1 5 0
= 5 V
1 7 5
2 0 0
1 7 5
4