tpcs8212 TOSHIBA Semiconductor CORPORATION, tpcs8212 Datasheet - Page 2

• Manufacturer Part Number: tpcs8212
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Note 3:
Note 4: V
Note 5: Repetitive rating; pulse width limited by maximum channel temperature
Note 6: ○ on lower right of the marking indicates Pin 1.
a)
a)
b)
Device mounted on a glass-epoxy board (a)
(Note 6)
※ Weekly code:
The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Lot No.
DD
= 16 V, T
(a)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
S8212
ch
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
= 25°C (initial), L = 1.0 mH, R
(Note 2a) Single-device value at
(Note 2b) Single-device value at
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(Three digits)
Single-device operation
dual operation
Single-device operation
dual operation
Part No. (or abbreviation code)
(Note 3a)
(Note 3b)
(Note 3a)
(Note 3b)
G
2
= 25 Ω, I
b)
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Symbol
Device mounted on a glass-epoxy board (b)
AR
= 6 A
(b)
Max
114
167
208
357
°C/W
°C/W
Unit
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
TPCS8212
2007-01-16