SI1555DL-T1 VISHAY [Vishay Siliconix], SI1555DL-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1555DL-T1
• Description: Complementary Low-Threshold MOSFET Pair
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71079
S-50245—Rev. D, 21-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
0.0
0.0
0.0
V
I
D
DS
= 0.66 A
0.5
= 10 V
On-Resistance vs. Drain Current
0.2
V
DS
0.2
Q
Output Characteristics
V
g
− Drain-to-Source Voltage (V)
V
GS
1.0
I
GS
D
− Total Gate Charge (nC)
= 5 thru 2.5 V
− Drain Current (A)
= 2.5 V
Gate Charge
0.4
1.5
0.4
0.6
2.0
1.5 V
V
0.6
GS
2 V
1 V
0.8
= 4.5 V
2.5
3.0
1.0
0.8
100
1.6
1.4
1.2
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
−50
0.0
0
C
On-Resistance vs. Junction Temperature
V
I
D
−25
rss
GS
= 0.66 A
= 4.5 V
0.5
4
V
T
GS
V
0
J
DS
Transfer Characteristics
C
− Junction Temperature (_C)
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
25_C
Capacitance
1.0
8
T
C
= 125_C
Vishay Siliconix
C
50
iss
12
1.5
75
Si1555DL
N−CHANNEL
−55_C
100
16
2.0
www.vishay.com
125
150
20
2.5
3