SI1555DL-T1 VISHAY [Vishay Siliconix], SI1555DL-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1555DL-T1
• Description: Complementary Low-Threshold MOSFET Pair
• Manufacturer: VISHAY [Vishay Siliconix]

www.vishay.com
Si1555DL
Vishay Siliconix
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.1
−0.2
−0.3
−0.4
0.2
0.1
0.1
0.01
1
0.1
−50
0.0
2
1
10
−4
Source-Drain Diode Forward Voltage
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
SD
T
0
J
Single Pulse
= 150_C
− Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
− Temperature (_C)
25
10
−3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.8
10
100
T
−2
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
−1
1
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
10
0
−3
On-Resistance vs. Gate-to-Source Voltage
10
−2
1
V
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
Single Pulse Power
10
DM
JM
− Gate-to-Source Voltage (V)
−1
− T
Time (sec)
2
t
1
A
= P
t
2
DM
1
Z
S-50245—Rev. D, 21-Feb-05
thJA
100
thJA
t
t
Document Number: 71079
3
I
1
2
D
(t)
= 400_C/W
= 0.66 A
10
N−CHANNEL
4
100
600
600
5