k6x1008c2d Samsung Semiconductor, Inc., k6x1008c2d Datasheet - Page 5

• Manufacturer Part Number: k6x1008c2d
• Description: 128kx8 Bit Low Power Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS
(V
DATA RETENTION CHARACTERISTICS
1. CS
K6X1008C2D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read
Write
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): C
CC
=4.5~5.5V, Commercial product: T
1
Vcc-0.2V
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Item
,
CS
2
V
CC
( Test Load and Input/Output Reference)
C
-0.2V, or CS
Parameter List
L
=50pF+1TTL
L
=100pF+1TTL
2
Symbol
0.2V
t
t
V
I
RDR
SDR
DR
DR
A
=0 to 70 C, Industrial product: T
CS
Vcc=3.0V, CS
See data retention waveform
1
Vcc-0.2V
1
1)
Vcc-0.2V
5
Test Condition
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
OHZ
t
t
t
OLZ
1)
WC
CW
AW
WP
WR
DW
OW
RC
CO
OE
OH
DH
AA
HZ
AS
LZ
A
=-40 to 85 C, Automotive product: T
1. Including scope and jig capacitance
K6X1008C2D-Q
K6X1008C2D-B
K6X1008C2D-F
C
Min
55
10
10
55
45
45
40
20
L
5
0
0
0
0
0
0
5
-
-
-
1)
55ns
Max
Speed Bins
55
55
25
20
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
2.0
0
5
-
-
-
Min
CMOS SRAM
70
10
10
70
60
60
50
25
5
0
0
0
0
0
0
5
-
-
-
70ns
Typ
A
-
-
-
-
-
-
=-40~125 C
September 2003
Max
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
5.5
Revision 1.0
10
10
20
-
-
Units
)
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ms
V
A
A
A