GSOT05C VISHAY [Vishay Siliconix], GSOT05C Datasheet - Page 2

• Manufacturer Part Number: GSOT05C
• Description: ESD Protection Diode
• Manufacturer: VISHAY [Vishay Siliconix]

GSOT03C to GSOT36C
Vishay Semiconductors
Electrical Characteristics
T
1)
Typical Characteristics
www.vishay.com
2
Part Number
J
17476
GSOT03C
GSOT04C
GSOT05C
GSOT08C
GSOT12C
GSOT15C
GSOT24C
GSOT36C
8/20 µs waveform used (see figure 2)
10000
= 25 °C unless otherwise noted
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
1000
17477
100
10
110
100
0.1
90
80
70
60
50
40
30
20
10
0
0
1.0
5
Marking
Device
Figure 2. Pulse Waveform
Code
03C
04C
05C
08C
12C
15C
24C
36C
td - Pulse Duration ( µ s )
10
10
t - Time ( µ s )
t
d
= I
15
PP
2
Stand-off
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
Voltage
Rated
100
V
12.0
15.0
24.0
36.0
3.3
4.0
5.0
8.0
300W, 8/20
WM
V
(T
20
amb
1000
µ
s waveshape
= 25 °C unless otherwise specified)
25
Breakdown
PPM
Minimum
@ 1 mA
Voltage
13.3
16.7
26.7
V
4.5
5.0
6.0
8.5
40
V
BR
10000
30
@ I
P
13.4
19.0
24.0
43.0
60.0
7.0
8.5
9.8
= 1 A
Maximum
Clamping
Voltage
1)
17478
V
V
100
C
80
60
40
20
@ I
0
0
P
10.5
12.5
15.0
28.0
35.0
60.0
75.0
9.0
= 5 A
25
1)
T
Figure 3. Power Derating
L
- Lead Temperature °C
50
t
Pulse Peak
p
Maximum
Current
= 8/20 µs
I
PPM
18
17
17
15
12
10
A
5
2
75
Average Power
100
Peak Pulse Power
Maximum
Leakage
Current
@ V
Document Number 85824
125
125
100
8/20 µ s
µA
10
I
2
1
1
1
D
125
WM
Rev. 1, 02-Jun-03
VISHAY
150
@ 0 V, 1 MHz
Capacitance
Maximum
600
600
400
350
150
100
pF
63
60
C