2SJ508_07 TOSHIBA [Toshiba Semiconductor], 2SJ508_07 Datasheet
2SJ508_07
Related parts for 2SJ508_07
2SJ508_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I = −100 μA(max) (V DSS Enhancement ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
Page 3
I – −1.0 −10 −3.2 −8 −0.8 −6 −5 −0.6 −0.4 Common source Ta = 25°C −0.2 Pulse test −2.1V 0 −1 −2 −3 −4 0 Drain-source voltage V DS (V) I – V ...
Page 4
(ON) 3.0 Common source Pulse test 2 −0.5A 2 −4 V 1.5 −10V 1.0 0.5 0 −80 − 120 Ambient temperature Ta (°C) Capacitance – ...
Page 5
Single pulse 100 10m SAFE OPERATING AREA − max (pulsed max (continuous) − −0.1 DC operation Ta = 25°C −0.01 *: Single nonrepetitive pulse Tc = 25°C Curves ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...