2SJ567_09 TOSHIBA [Toshiba Semiconductor], 2SJ567_09 Datasheet - Page 3

• Manufacturer Part Number: 2SJ567_09
• Description: TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

−2.0
−1.6
−1.2
−0.8
−0.4
−10
0.1
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
Drain-source voltage V
−1
−2
Gate-source voltage V
−15
Drain current I
−10
−2
−4
⎪Y
I
I
D
D
−8
fs
– V
– V
−1
⎪ – I
Tc = −55°C
DS
GS
−3
−6
D
D
DS
GS
−6
(A)
Tc = −55°C
100
100
25
(V)
(V)
V GS = −4 V
−5
25
−4
−8
−4.8
−4.6
−4.4
−4.2
−10
−10
−5
3
−10
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
−15
−10
Common source
Tc = 25°C
Pulse test
−10
−4
Drain-source voltage V
Gate-source voltage V
Drain current I
−8
−6
R
−20
V
−8
DS (ON)
I
DS
D
– V
−1
– V
Common source
Tc = 25°C
Pulse test
DS
GS
– I
−30
−12
V GS = −10 V
D
D
GS
Common source
Tc = 25°C
Pulse test
DS
(A)
I D = −2.5 A
−15
−5.75
(V)
(V)
−40
−16
V GS = −4 V
−1.5
−0.8
−5.25
2009-07-13
−5.5
−4.8
−4.6
−4.4
−4.2
−5
2SJ567
−50
−20
−10