2SJ610_09 TOSHIBA [Toshiba Semiconductor], 2SJ610_09 Datasheet - Page 4

• Manufacturer Part Number: 2SJ610_09
• Description: TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

1000
100
10
40
30
20
10
−0.1
−80
5
4
3
2
1
0
1
0
0
Common source
V
f = 1 MHz
Tc = 25°C
Common source
V
Pulse test
GS
GS
= 0 V
= −10 V
−0.3
−40
40
Drain-source voltage V
Case temperature Tc
Case temperature Tc
Capacitance – V
−1
0
R
80
DS (ON)
P
D
−3
40
– Tc
– Tc
120
−10
80
DS
DS
C oss
(°C)
C iss
C rss
(°C)
−2 A
(V)
160
I D = −1 A
−30
120
−100
160
200
4
−100
−300
−200
−100
−10
0.1
−1
−5
−4
−3
−2
−1
−80
0
0
0
0
V DS
Common source
Tc = 25°C
Pulse test
Dynamic input/output characteristics
0.2
5
−40
−5 V
Drain-source voltage V
V GS = −10 V
Case temperature Tc
Total gate charge Q
0.4
−3 V
0
V GS
I
DR
0.6
15
V
th
– V
40
– Tc
0, 1
0.8
DS
−100
Common source
I
Tc = 25°C
Pulse test
−50
g
D
80
DS
= −2 A
1.0
25
Common source
V
I
Pulse test
(nC)
D
(°C)
V DD = −200 V
DS
= −1 mA
(V)
= −10 V
120
1.2
2009-07-13
2SJ610
160
1.4
35
−30
−25
−20
−15
−10
−5
−0