N0100P-T1-AT RENESAS [Renesas Technology Corp], N0100P-T1-AT Datasheet - Page 5

• Manufacturer Part Number: N0100P-T1-AT
• Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
• Manufacturer: RENESAS [Renesas Technology Corp]

TYPICAL CHARACTERISTICS (T
-0.01
-100
-0.1
-10
120
100
-1
80
60
40
20
-0.1
0
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
I
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm,
copper foil 50 mm x 50 mm, t ≤ 5 sec.
D(DC)
= –3.5 A
25
V
DS
T
A
- Drain to Source Voltage - V
- Ambient Temperature - °C
50
1000
-1
100
I
0.1
D(pulse)
10
1
0.1 m
75
= –12 A
100
1 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
-10
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm
A
125
= 25°C)
T
Single Pulse
A
= 25°C
150
10 m
-100
Data Sheet D20203EJ1V0DS
175
PW - Pulse Width - s
100 m
Mounted on 2500 mm
Coper Pad Connected to Drain Electrode
1
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1
0
0
10
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2
T
x 35
A
- Ambient Temperature - °C
50
μ
100
Mounted on 2500 mm
Coper Pad Connected to
Drain Electrode, t ≤ 5 sec
m
75
100
1000
125
2
x 35
150
N0100P
μ
m
175
3