N0100P-T1-AT RENESAS [Renesas Technology Corp], N0100P-T1-AT Datasheet - Page 6

• Manufacturer Part Number: N0100P-T1-AT
• Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
• Manufacturer: RENESAS [Renesas Technology Corp]

4
-1.2
-0.8
-0.6
-0.4
-0.2
100
-14
-12
-10
-1
90
80
70
60
50
40
30
20
10
-8
-6
-4
-2
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
0
-50
-50
0
V
I
D
DS
V
= –1 mA
GS
= –10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= –1.8 V
-0.4
T
DS
T
ch
–2.5 V
–3.0 V
–4.5 V
ch
- Drain to Source Voltage - V
0
- Channel Temperature - °C
0
- Channel Temperature - °C
-0.8
V
GS
= –4.5 V
50
50
–3.0 V
–2.5 V
–1.8 V
-1.2
I
D
= –1.5 A
100
100
–2.0 A
-1.6
Pulsed
Pulsed
150
Data Sheet D20203EJ1V0DS
150
-2
-0.0001
-0.001
-0.01
-100
-0.1
-10
100
100
0.1
-1
10
90
80
70
60
50
40
30
20
10
1
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
-0.01
0
FORWARD TRANSFER CHARACTERISTICS
0
V
Pulsed
V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Pulsed
DS
DS
T
T
= –10 V
A
A
= –10 V
-1
= –25°C
= –25°C
V
V
125°C
GS
GS
25°C
75°C
-2
- Gate to Source Voltage - V
- Gate to Source Voltage - V
-0.1
-1
I
D
-3
- Drain Current - A
I
D
= –2.0 A
T
-4
A
= –25°C
125°C
-5
25°C
75°C
-2
-1
-6
N0100P
-7
-3
-10
-8