rd12mvp1 Mitsumi Electronics, Corp., rd12mvp1 Datasheet
rd12mvp1
Available stocks
Related parts for rd12mvp1
rd12mvp1 Summary of contents
Page 1
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRIPTION RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES •High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz •High Efficiency: 55%min. (175MHz) •No gate protection diode ...
Page 2
... Vds(V) Vds VS. Coss CHARACTERISTICS 160 140 120 100 Vds(V) RD12MVP1 MITSUBISHI RF POWER MOS FET RD12MVP1 Vgs-Ids CHARACTERISTICS 7 Ta=+25°C Vds=10V 160 200 0 1 Vds VS. Ciss CHARACTERISTICS 160 Vgs=7.5V Ta=+25°C 140 f=1MHz 120 100 Vgs=6 ...
Page 3
... Idq=1. Pin(dBm) Vdd-Po CHARACTERISTICS @f=175MHz 30 Ta=25°C f=175MHz Pin=0.6W 25 Idq=1.0A Zg=ZI=50 ohm Vdd(V) RD12MVP1 MITSUBISHI RF POWER MOS FET RD12MVP1 Pin-Po CHARACTERISTICS @f=175MHz 0 Idd ...
Page 4
... Note:Board material= glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm W:Line width=1.0mm RD12MVP1 MITSUBISHI RF POWER MOS FET RD12MVP1 Vgg C1 19mm W 19mm RD12MVP1 175MHz 4.7k Ohm 3mm 9.5mm 9.5mm L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter) L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) C1,C2:2200pF MITSUBISHI ELECTRIC 4/7 Vdd ...
Page 5
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. S11 [MHz] (mag) (ang) (mag) 100 0.782 -165.5 6.105 125 0.801 -166.9 4.716 150 0.817 -168.0 3.724 175 0.833 -168.8 3.023 200 0 ...
Page 6
... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. S11 [MHz] (mag) (ang) (mag) 100 0.799 -169.4 5.980 125 0.813 -170.7 4.690 150 0.825 -171.3 3.726 175 0.835 -171.9 3.045 200 0 ...
Page 7
... These results causes in fire or injury. RD12MVP1 MITSUBISHI RF POWER MOS FET RD12MVP1 Warning! MITSUBISHI ELECTRIC 7/7 1st Jun. 2006 ...