MRF6S23100HR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF6S23100HR3_06 Datasheet - Page 8

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MRF6S23100HR3_06

Manufacturer Part Number
MRF6S23100HR3_06
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
MRF6S23100HR3 MRF6S23100HSR3
8
Figure 15. Series Equivalent Source and Load Impedance
f = 2400 MHz
f = 2300 MHz
Z
Z
source
load
Input
Matching
Network
2300
2310
2320
2330
2340
2350
2360
2370
2380
2390
2400
MHz
f
V
DD
Z
= Test circuit impedance as measured from
= Test circuit impedance as measured
load
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
source
12.20 - j6.20
12.06 - j6.40
10.92 - j7.34
10.73 - j7.46
10.55 - j7.53
11.91 - j6.56
11.76 - j6.71
11.60 - j6.86
11.44 - j7.00
11.27 - j7.13
11.10 - j7.22
Z
DQ
source
Z
Ω
= 1000 mA, P
Device
Under
Test
o
= 25 Ω
f = 2400 MHz
f = 2300 MHz
out
Z
load
= 20 W Avg.
2.06 - j4.69
2.04 - j4.62
2.02 - j4.55
2.01 - j4.48
1.99 - j4.42
1.97 - j4.35
1.96 - j4.28
1.94 - j4.22
1.93 - j4.15
1.91 - j4.09
1.90 - j4.02
Z
Z
source
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data

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