MRF6S9125 FREESCALE [Freescale Semiconductor, Inc], MRF6S9125 Datasheet - Page 2

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MRF6S9125

Manufacturer Part Number
MRF6S9125
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet

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2
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Part is internally input matched.
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
(V
(V
(V
(V
(V
(V
(V
(V
(V
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DS
GS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
D
GS
GS
= 400 µAdc)
= 950 mAdc)
= 8 Adc)
= 2.74 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(3)
Test Methodology
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
ACPR
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
g
η
= 950 mA, P
3
oss
rss
fs
ps
D
Symbol
R
0.05
Min
Package Peak Temperature
out
19
29
θJC
1
2
= 27 W, f = 880 MHz
- 47.1
2.89
0.23
20.2
260
Typ
- 16
2.1
60
31
1B (Minimum)
6
2
IV (Minimum)
C (Minimum)
Value
Class
Freescale Semiconductor
0.44
0.45
(1,2)
Max
- 45
0.3
10
24
- 9
1
1
3
4
RF Device Data
(continued)
°C/W
µAdc
µAdc
µAdc
Unit
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
%
S

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