MRF6S9160HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF6S9160HR3_08 Datasheet - Page 11

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MRF6S9160HR3_08

Manufacturer Part Number
MRF6S9160HR3_08
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
2
Aug. 2008
Date
• Listed replacement part and Device Migration notification reference number, p. 1
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Corrected V
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider
• Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps
• Added Product Documentation and Revision History, p. 11
is standard, p. 1
provided in Thermal Characteristics table), p. 1
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
information, p. 2
numbers, p. 3
dynamic range, p. 6
limitations, p. 7
operating characteristics and location of MTTF calculator for device, p. 7
DS
to V
PRODUCT DOCUMENTATION
DD
in the RF test condition voltage callout for V
REVISION HISTORY
Description
GS(Q)
MRF6S9160HR3 MRF6S9160HSR3
, On Characteristics table, p. 2
2
and listed
11

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