MRF7P20040HR3_10 FREESCALE [Freescale Semiconductor, Inc], MRF7P20040HR3_10 Datasheet - Page 8

• Manufacturer Part Number: MRF7P20040HR3_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

8
MRF7P20040HR3 MRF7P20040HSR3
Figure 12. Series Equivalent Source and Load Impedance — Peaking Side
Figure 11. Series Equivalent Source and Load Impedance — Carrier Side
V
V
Input
Matching
Network
Input
Matching
Network
DD
DD
Note: Measured with Peaking side open.
Z
Z
Note: Measured with Carrier side open.
Z
Z
load
source
load
source
= 32 Vdc, I
= 32 Vdc, I
1995
2000
2005
2010
2015
2020
2025
2030
2035
MHz
1995
2000
2005
2010
2015
2020
2025
2030
2035
MHz
f
f
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= Test circuit impedance as measured from
DQA
DQA
drain to ground.
gate to ground.
Z
drain to ground.
gate to ground.
Z
source
source
= 150 mA, V
= 150 mA, V
6.80 -- j13.11
6.66 -- j13.03
6.52 -- j12.93
6.37 -- j12.85
6.22 -- j12.78
6.08 -- j12.69
5.94 -- j12.60
5.80 -- j12.49
5.65 -- j12.40
8.45 -- j12.85
8.28 -- j12.79
8.11 -- j12.70
7.95 -- j12.63
7.79 -- j12.56
7.63 -- j12.48
7.50 -- j12.40
7.34 -- j12.32
7.19 -- j12.24
Z
Z
source
Device
Under
Test
Device
Under
Test
source
Ω
Ω
GSB
GSB
= 1.5 Vdc, P
= 1.5 Vdc, P
Z
Z
load
load
14.67 + j4.09
15.08 + j3.58
15.27 + j3.29
15.45 + j3.00
15.62 + j2.77
15.80 + j2.44
15.95 + j2.14
16.08 + j1.82
14.87+ j3.82
5.83 -- j10.09
5.32 -- j10.08
5.06 -- j10.07
4.80 -- j10.06
4.55 -- j10.01
5.57 -- j10.11
4.32 -- j9.96
4.06 -- j9.88
3.82 -- j9.81
out
out
Z
Z
load
Ω
load
Ω
= 10 W Avg.
= 10 W Avg.
Output
Matching
Network
Output
Matching
Network
Freescale Semiconductor
RF Device Data