MRF8S8260H FREESCALE [Freescale Semiconductor, Inc], MRF8S8260H Datasheet - Page 2

• Manufacturer Part Number: MRF8S8260H
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2
MRF8S8260HR3 MRF8S8260HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
= 70 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(1)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 1380 Adc)
= 1500 mAdc, Measured in Functional Test)
= 3.0 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Characteristic
Test Methodology
Frequency
850 MHz
875 MHz
895 MHz
(T
A
= 25C unless otherwise noted)
DD
= 28 Vdc, I
Symbol
V
V
V
ACPR
I
I
I
PAR
(dB)
21.3
21.4
21.1
DS(on)
GS(th)
GS(Q)
G
G
IRL
DSS
DSS
GSS

DQ
ps
DD
ps
D
= 28 Vdc, I
= 1500 mA, P
19.6
35.5
36.2
37.4
37.5
Min
(%)
1.5
2.3
0.1
5.8

—
—
—
—
—
D
DQ
out
= 1500 mA, P
= 70 W Avg., f = 895 MHz,
Output PAR
--36.9
0.24
21.1
37.5
(dB)
Typ
--16
2.3
3.0
6.2
6.5
6.3
6.2
—
—
—
Freescale Semiconductor, Inc.
Class
IV
A
2
out
= 70 W Avg.,
ACPR
(dBc)
--35.0
--37.0
--36.7
--36.9
Max
22.6
--12
3.0
3.8
0.3
10
—
—
1
1
RF Device Data
(continued)
Adc
Adc
Adc
Unit
(dB)
Vdc
Vdc
Vdc
dBc
IRL
--13
--16
dB
dB
dB
--9
%