MRF8S9100HR3_10 FREESCALE [Freescale Semiconductor, Inc], MRF8S9100HR3_10 Datasheet - Page 5

• Manufacturer Part Number: MRF8S9100HR3_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
--10
--20
--30
--40
--50
--60
1
V
I
(f1 + f2)/2 = Center Frequency of 940 MHz
Figure 4. Intermodulation Distortion Products
DQ
IM7--U
IM7--L
DD
= 500 mA, Two--Tone Measurements
= 28 Vdc, P
IM5--U
IM3--U
versus Two- -Tone Spacing
out
TWO--TONE SPACING (MHz)
= 100 W (PEP)
IM5--L
IM3--L
Figure 3. Power Gain, Input Return Loss, EVM and Drain
20
18
16
21
20
19
18
17
16
15
21
19
17
15
10
Efficiency versus Frequency @ P
Efficiency versus Frequency @ P
Figure 2. Power Gain, Input Return Loss and Drain
800
800
V
DD
820
820
= 28 Vdc, P
G
IRL
ps
840
840
TYPICAL CHARACTERISTICS
out
860
860
= 72 W CW, I
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
880
880
V
I
DQ
DD
EVM
η
100
= 700 mA, EDGE Modulation
D
= 28 Vdc, P
900
900
DQ
= 500 mA
920
920
20
19
18
17
16
15
out
η
1
D
out
out
= 46 W Avg.
940
940
η
G
920 MHz
D
ps
Figure 5. Power Gain and Drain Efficiency
G
= 46 Watts Avg.
IRL
= 72 Watts CW
ps
960
960
f = 940 MHz
960 MHz
980
980
P
out
versus Output Power
, OUTPUT POWER (WATTS) CW
1000
1000
940 MHz
60
50
40
30
20
10
0
50
40
30
20
4
2
0
MRF8S9100HR3 MRF8S9100HSR3
10
V
I
--10
960 MHz
--5
--15
--20
DQ
DD
--10
= 500 mA
--5
--15
--20
= 28 Vdc
920 MHz
100
200
75
60
45
30
15
0
5