MRF9060NR1_09 FREESCALE [Freescale Semiconductor, Inc], MRF9060NR1_09 Datasheet - Page 2

• Manufacturer Part Number: MRF9060NR1_09
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

MRF9060NR1
2
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
DS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 65 Vdc, V
= 26 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
DS
D
D
D
D
GS
GS
out
out
out
out
out
out
out
out
= 200 μAdc)
= 450 mAdc)
= 4 Adc)
= 1.3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
Characteristic
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
(T
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
A
= 25°C unless otherwise noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Symbol
V
V
V
I
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
IRL
IRL
DSS
DSS
GSS
g
oss
η
η
iss
rss
fs
ps
ps
Min
17
37
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
3
- 31.5
- 14.5
- 12.5
0.21
Typ
101
2.8
3.7
5.3
2.5
- 31
53
18
40
18
40
—
—
—
Freescale Semiconductor
Max
0.4
- 28
10
—
—
—
—
—
—
- 9
—
—
—
—
1
1
4
5
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
pF
pF
pF
dB
dB
dB
dB
%
%
S