BZT03C12 VISHAY [Vishay Siliconix], BZT03C12 Datasheet - Page 4

• Manufacturer Part Number: BZT03C12
• Description: Silicon Zener-Diodes with Surge Current Specification
• Manufacturer: VISHAY [Vishay Siliconix]

BZT03..Series
Vishay Semiconductors
Typical Characteristics
Package Dimensions in mm
www.vishay.com
4
25
94 9584
Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm,
Figure 2. Total Power Dissipation vs. Ambient Temperature
7
Sintered Glass Case
SOD 57
Weight max. 0.5g
4
3
2
1
0
0
15mm
l=10mm
T
40
amb
20mm
50
– Ambient T emperature ( °C )
26 min.
see Fig.1
80
R
thJA
≤100 K/W
120
2
T
l
L
=constant
Cathode Identification
(T
160
50
amb
l
3
94 9086a
= 25 °C unless otherwise specified)
200
4.2 max.
3.6 max.
94 9585
94 9586
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
10000
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
10
0
Figure 3. Forward Current vs. Forward Voltage
0.01
0
26 min.
technicaldrawings
according to DIN
specifications
0.5
0.1
V
F
t
p
– Forward Voltage ( V )
T
– Pulse Length ( ms )
j
T
=25°C
j
=25°C
1.0
1
Length
0.82 max.
94 9538
1.5
10
Document Number 85599
100
2.0
Rev. 4, 10-Sep-03
VISHAY