k9k1g08b0b Samsung Semiconductor, Inc., k9k1g08b0b Datasheet - Page 19

• Manufacturer Part Number: k9k1g08b0b
• Description: 128m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

Input Data Latch Cycle
Serial access Cycle after Read
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
ALE
CLE
CE
WE
I/O
CE
RE
R/B
I/Ox
0
~
7
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x
t
ALS
NOTES : Transition is measured r200mV from steady state voltage with load.
t
RR
t
WP
t
DS
DIN 0
t
WC
t
This parameter is sampled and not 100% tested.
REA
(CLE=L, WE=H, ALE=L)
t
DH
t
WH
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
Dout
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
19
t
DH
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
x x x x x x x x x
Dout
t
RHZ*
t
WP
DIN 511
t
DS
t
DH
t
CH
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x x
t
CLH
t
REA
FLASH MEMORY
Dout
t
t
t
RHZ*
t
OH
CHZ*
OH
Advance