k9k1g08b0b Samsung Semiconductor, Inc., k9k1g08b0b Datasheet - Page 28
k9k1g08b0b
Manufacturer Part Number
k9k1g08b0b
Description
128m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K9K1G08B0B.pdf
(41 pages)
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K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Figure 8. Read1 Operation
CLE
CE
WE
ALE
R/B
RE
I/O
0
~
7
00h
* After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle.
x x x
x x x
x x x
x x x
x x x
A
0
x x x
x x x
x x x
x x x
x x x
Start Add.(4Cycle)
~ A
7
x x x
x x x
x x x
x x x
x x x
& A
9
~ A
x x x
x x x
x x x
x x x
x x x
26
1st half array
x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x
x x x x x x x x x x x x x x x x x x
(00h Command)
Data Field
t
R
2st half array
28
Spare Field
1st half array
Data Output(Sequential)
(01h Command)*
FLASH MEMORY
Data Field
2st half array
Spare Field
Advance
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