km641001a Samsung Semiconductor, Inc., km641001a Datasheet - Page 3

• Manufacturer Part Number: km641001a
• Description: 256kx 4 High Speed Static Ram 5v Operating , Evolutionary Pin Out Operated At Commercial Temperature Range
• Manufacturer: Samsung Semiconductor, Inc.

RECOMMENDED DC OPERATING CONDITIONS
* V
** V
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
DC AND OPERATING CHARACTERISTICS
* V
CAPACITANCE*
* NOTE : Capacitance is sampled and not 100% tested
KM641001A
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
CC
IL
IH
(Min)=-2.0V a.c(Pulse Width
=5.0V, Temp =25 C
(Max)=V
Parameter
Parameter
CC
CC
+ 2.0V a.c (Pulse Width
Item
Supply Relative to V
Parameter
(T
A
=25 C, f=1.0MHz)
10ns) for I
SS
Symbol
SS
10ns) for I
V
V
I
V
I
I
I
SB1
OH1
Symbol
I
CC
LO
SB
OH
LI
OL
V
V
Symbol
V
V
20mA
*
CC
SS
IH
IL
C
C
I/O
IN
.
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
20mA
OL
OH
OH1
IN
OUT
IN
=8mA
=-4mA
= V
=-0.1mA
V
=V
IH
IL,
CC
SS
SS
or OE=V
V
-0.2V or V
IN
to V
to V
-0.5*
= V
Min
Test Conditions
(T
4.5
2.2
0
CC
CC
- 3 -
CC
A
V
IH
Symbol
Test Conditions
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
IH
IN
V
-0.2V,
V
T
IH
or V
V
IN
, V
P
I/O
T
or WE=V
STG
IN
CC
D
A
=0V
(T
=0V
OUT
IL,
0.2V
A
=0 to 70 C)
I
OUT
IL
=0mA
Typ
5.0
0
-
-
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
MIN
Rating
0 to 70
-
-
15ns
20ns
1.0
V
CC
Max
5.5
0.8
+ 0.5**
0
Min
2.4
-2
-2
CMOS SRAM
-
-
-
-
-
-
Max
8
6
PRELIMINARY
Max
3.95
125
120
0.4
25
2
2
8
-
February 1998
Unit
W
V
V
C
C
Unit
V
V
V
V
Unit
pF
pF
Rev 5.0
Unit
mA
mA
mA
V
V
V
A
A