km641001a Samsung Semiconductor, Inc., km641001a Datasheet - Page 6

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km641001a

Manufacturer Part Number
km641001a
Description
256kx 4 High Speed Static Ram 5v Operating , Evolutionary Pin Out Operated At Commercial Temperature Range
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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KM641001A
TIMING WAVEFORM OF WRITE CYCLE(2)
TIMING WAVEFORM OF WRITE CYCLE(1)
Address
CS
WE
Data in
Data out
Address
CS
WE
Data in
Data out
OE
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
4. At any given temperature and voltage condition, t
5. Transition is measured 200mV from steady state voltage with Load(B). This parameter is sampled and not 100%
6. Device is continuously selected with CS=V
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and
V
device to device.
tested.
write cycle.
HZ
OH
and t
or V
OHZ
OL
High-Z
High-Z
levels.
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to
t
t
AS(4)
AS(4)
(OE=Low Fixed)
(OE= Clock)
t
OHZ(6)
- 6 -
t
IL.
WHZ(6)
t
t
AW
AW
HZ
t
t
CW(3)
CW(3)
t
t
(Max.) is less than t
WC
WC
t
t
WP1(2)
WP(2)
High-Z(8)
High-Z(8)
Valid Data
Valid Data
t
t
DW
DW
LZ
(Min.) both for a given device and from
t
t
t
t
WR(5)
WR(5)
DH
DH
t
OW
CMOS SRAM
PRELIMINARY
(10)
February 1998
Rev 5.0
(9)

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