JANSF2N7426U IRF [International Rectifier], JANSF2N7426U Datasheet
![no-image](/images/no-image-200.jpg)
JANSF2N7426U
Related parts for JANSF2N7426U
JANSF2N7426U Summary of contents
Page 1
... For footnotes refer to the last page www.irf.com REF: MIL-PRF-19500/655 ™ RAD-Hard R I QPL Part Number DS(on) D 0.154 -29A JANSR2N7426U 0.154 -29A JANSF2N7426U ® TM HEXFET Features: n Single Event Effect (SEE) Hardened n Ultra Low R n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements ...
Page 2
IRHNA9260, JANSR2N7426U Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage ...
Page 3
Radiation Characteristics International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 ...
Page 4
IRHNA9260, JANSR2N7426U 1000 VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 100 -5.0V 20µs PULSE WIDTH Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...
Page 5
Pre-Irradiation 10000 1MHz iss rss 8000 oss iss 6000 4000 C ...
Page 6
IRHNA9260, JANSR2N7426U 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 SINGLE PULSE ...
Page 7
Pre-Irradiation -12V -20V 0. Fig 12a. Unclamped Inductive Test Circuit ...
Page 8
IRHNA9260, JANSR2N7426U Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature =-50V, starting 25° 1.2mH, Peak -29A -12V 29A, di/dt -377A ...