JANSF2N7426U IRF [International Rectifier], JANSF2N7426U Datasheet

JANSF2N7426U

Manufacturer Part Number

JANSF2N7426U

Description

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

Manufacturer

IRF [International Rectifier]

Datasheet

1.JANSF2N7426U.pdf (8 pages)

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RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

International Rectifier’s RAD-Hard

MOSFET technology provides high performance

power MOSFETs for space applications. This tech-

nology has over a decade of proven performance

and reliability in satellite applications. These de-

vices have been characterized for both Total Dose

and Single Event Effects (SEE). The combination

of low R

power losses in switching applications such as DC

to DC converters and motor control. These de-

vices retain all of the well established advantages

of MOSFETs such as voltage control, fast switch-

ing, ease of paralleling and temperature stability

of electrical parameters.

For footnotes refer to the last page

Absolute Maximum Ratings

I D @ V GS = -12V, T C = 25°C

I D @ V GS = -12V, T C = 100°C

www.irf.com

Part Number Radiation Level

IRHNA93260 300K Rads (Si)

IRHNA9260

P D @ T C = 25°C

DS(on)

T STG

dv/dt

V GS

E AS

E AR

I DM

I AR

T J

and low gate charge reduces the

100K Rads (Si)

Parameter

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

0.154

DS(on)

HEXFET

-29A

RAD-Hard

QPL Part Number

JANSR2N7426U

JANSF2N7426U

REF: MIL-PRF-19500/655

Features:

™

Single Event Effect (SEE) Hardened

Ultra Low R

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

HEXFET

200V, P-CHANNEL

JANSR2N7426U

3.3 (Typical)

300 (for 5s)

-55 to 150

-116

-20

-29

DS(on)

±20

300

-29

-18

2.4

500

IRHNA9260

TECHNOLOGY

Pre-Irradiation

SMD-2

PD - 93969

Units

W/°C

V/ns

11/21/00

Related parts for JANSF2N7426U

JANSF2N7426U Summary of contents

Page 1

... For footnotes refer to the last page www.irf.com REF: MIL-PRF-19500/655 ™ RAD-Hard R I QPL Part Number DS(on) D 0.154 -29A JANSR2N7426U 0.154 -29A JANSF2N7426U ® TM HEXFET Features: n Single Event Effect (SEE) Hardened n Ultra Low R n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements ...

Page 2

IRHNA9260, JANSR2N7426U Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage ...

Page 3

Radiation Characteristics International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 ...

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JANSF2N7426U IRF [International Rectifier], JANSF2N7426U Datasheet

JANSF2N7426U

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JANSF2N7426U Summary of contents

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