JANSF2N7426U IRF [International Rectifier], JANSF2N7426U Datasheet - Page 2

• Manufacturer Part Number: JANSF2N7426U
• Description: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
• Manufacturer: IRF [International Rectifier]

Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
IRHNA9260, JANSR2N7426U
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
R thJC
R thJ-PCB
BV DSS / T J Temperature Coefficient of Breakdown
I S
I SM
V SD
t rr
Q RR
t on
(on)
(off)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-PC board
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max
—
—
Min Typ Max Units
—
—
—
—
—
Min
-200
-2.0
—
—
—
14
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
—
—
—
-0.27
6143
Typ Max Units
0.42
915
159
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-116
-3.0
738
-29
12
0.154
0.159
°C/W
-250
-100
-4.0
100
300
141
148
220
Units
-25
—
—
—
65
58
37
—
—
—
—
ns
V
C
A
V/°C
S ( )
nH
nA
nC
ns
pF
V
V
A
soldered to a 2” square copper-clad board
T j = 25°C, I F = -29A, di/dt
T
j
Measured from the center of
drain pad to center of source pad
= 25°C, I S = -29A, V GS = 0V
Reference to 25°C, I D = -1.0mA
V DS > -15V, I DS = -18A
V DS = V GS , I D = -1.0mA
Test Conditions
Test Conditions
V GS = 0V, I D = -1.0mA
V GS = 0V, V DS = -25V
V GS = -12V, I D = -18A
V GS = -12V, I D = -29A
V DS = -160V ,V GS =0V
V GS = -12V, I D = -29A
V GS = 0V, T J = 125°C
V DD = -100V, I D = -29A
Test Conditions
V DD -50V
V DS = -160V,
V DS = -100V
V GS = -20V
R G = 2.35
V GS = 20V
f = 1.0MHz
Pre-Irradiation
www.irf.com
-100A/ s