3EZ13 TRSYS [Transys Electronics], 3EZ13 Datasheet - Page 3

• Manufacturer Part Number: 3EZ13
• Description: GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
• Manufacturer: TRSYS [Transys Electronics]

RATING AND CHARACTERISTICS CURVES
3EZ11 THRU 3EZ200
APPLICATION NOTE:
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Since the actual voltage available from a given zener
Lead Temperature, T
and P
vary and depends on the device mounting method.
tie points in common use and for printed circuit board
wiring.
LA
LA
is the lead-to-ambient thermal resistance ( /W)
is generally 30-40 /W for the various chips and
D
is the power dissipation. The value for
Fig. 3-MAXIMUM SURGE POWER
TL =
L
, should be determined from:
LA
P
D
+ T
A
Fig. 2-TYPICAL THERMAL RESPONSE L
LA
will
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible
to the tie point. The thermal mass connected to the tie
point is normally large enough so that it will not
significantly respond to heat surges generated in the
diode as a result of pulsed operation once steady-state
conditions are achieved. Using the measured value of
T
L
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
, the junction temperature may be determined by:
T
JL
is the increase in junction temperature above the
Fig. 4-TYPICAL REVERSE LEAKAGE
T
J
T
= T
JL
=
L
+ T
LA
P
JL
D