3EZ13 TRSYS [Transys Electronics], 3EZ13 Datasheet - Page 4

• Manufacturer Part Number: 3EZ13
• Description: GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
• Manufacturer: TRSYS [Transys Electronics]

of P
Changes in voltage, Vz, can then be found from:
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
RATING AND CHARACTERISTICS CURVES
3EZ11 THRU 3EZ200
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
For worst-case design, using expected limits of Iz, limits
VZ
D
, the zener voltage temperature coefficient, is
and the extremes of T
Fig. 7-V
Fig. 5-UNITS TO 12 VOLTS
Z
V =
= 3.9 THRU 10 VOLTS
J
VZ
( T
T
JL
J
) may be estimated.
(90% of the Units are int he Ranges Indicated)
TEMPERATURE COEFFICIENT REAGES
excursions as low as possible.
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots
resulting in device degradation should the limits of Figure
3 be exceeded.
Data of Figure 2 should not be used to compute surge
Fig. 6-UNITS 10 TO 200 VOLTS
Fig. 8- V
Z
= 12 THRU 82 VOLTS