RF5111PCBA-41X RFMD [RF Micro Devices], RF5111PCBA-41X Datasheet - Page 8

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RF5111PCBA-41X

Manufacturer Part Number
RF5111PCBA-41X
Description
3V DCS POWER AMPLIFIER
Manufacturer
RFMD [RF Micro Devices]
Datasheet
2-8
RF5111
Distance between edge of
0.240" to improve the "off"
device and capacitor is
RF IN
isolation
33 pF
15 pF
V
1 nF
CC
15 pF
1
2
3
4
Application Schematic
V
16
5
CC
APC
15
6
15 pF
14
7
12 pF
Very close to
pin 15/16
13
8
V
15 pF
CC
Notes:
1. Using a hi-Q capacitor will increase efficiency slightly.
2. All capacitors are standard 0402 multi layer chip.
1.0 pF
12
11
10
9
Instead of a stripline,
an inductor of ~6 nH
can be used
edge of device and
capacitor is 0.080"
Distance between
15 pF
Quarter wave
5.1 pF
Note 1
50 Ω μstrip
length
V
CC
center of capacitors
Distance center to
Instead of a stripline, an
inductor of 2.2 nH can
0.220"
33 pF
be used
1.0 pF
Note 1
RF OUT
Rev A1 060921

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