SDT452 SAMHOP [SamHop Microelectronics Corp.], SDT452 Datasheet
SDT452
Manufacturer Part Number
SDT452
Description
P -Channel E nhancement Mode F ield E ffect Transistor
Manufacturer
SAMHOP [SamHop Microelectronics Corp.]
Datasheet
1.SDT452.pdf
(5 pages)
S amHop Microelectronics C orp.
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
THE R MAL C HAR AC TE R IS TIC S
V
ABS OLUTE MAXIMUM R ATINGS (T
-30V
DS S
Drain-S ource Voltage
Gate-S ource Voltage
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
Operating and S torage Temperature R ange
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
Drain C urrent-C ontinuous
-5.3A
I
D
P arameter
-P ulsed
D
S OT-223
R
DS (ON) ( m
52 @ V
85 @ V
Derate above 25 C
a
G
D
S
@ TJ=125 C
G S
G S
@ Tc=25 C
W
= -10V
= -4.5V
D
) T Y P
S OT-223 (J 23Z)
G
A
1
=25 C unless otherwise noted)
T
S ymbol
S
J
R
R
F E AT UR E S
V
, T
V
I
P
DM
I
I
GS
DS
S uper high dense cell design for low R
R ugged and reliable.
D
S
S OT-223 P ackage.
D
S TG
JC
JA
S DT 452AP
G
-65 to 150
Limit
-5.3
-30
-16
0.08
5.3
20
12
42
3
D
S
Augus t , 2002
DS (ON
Unit
W / C
W
C
C
A
A
V
V
A
C
/W
/W
).
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SDT452 Summary of contents
Page 1
S amHop Microelectronics C orp hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR (ON -30V -5. ...
Page 2
S DT 452AP E LE CTR ICAL CHAR ACTE R IS TICS (T Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage b ON CHAR ACTE R IS TICS Gate Threshold ...
Page 3
E LE CTR ICAL CHAR ACTE R IS TICS (T Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS Diode Forward Voltage Notes a.S urface Mounted Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle ...
Page 4
S DT 452AP 1. 1.06 I =-250uA D 1.03 1.00 0.97 0.94 0.91 -50 - unction T emperature ( igure 5. G ate T hres hold ...
Page 5
igure 11. S witching ircuit 2 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls ...