STB8444 SAMHOP [SamHop Microelectronics Corp.], STB8444 Datasheet
STB8444
Related parts for STB8444
STB8444 Summary of contents
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S mHop Microelectronics C orp. a N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY DS(ON) DSS 80A 4.8 @ VGS=10V 40V STB SERIES TO-263(DD-PAK) ABSOLUTE MAXIMUM RATINGS ( T Symbol Parameter V Drain-Source Voltage DS V ...
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STB/P8444 ELECTRICAL CHARACTERISTICS 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage Current I GSS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) R Drain-Source On-State Resistance DS(ON) g Forward Transconductance ...
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STB/P8444 120 = 0 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics ...
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STB/P8444 Gate-Sorce Voltage(V) GS Figure 7. On-Resistance vs. Gate-Source Voltage 9000 7500 Cis s 6000 4500 3000 1500 ...
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STB/P8444 D.U 20V 0.01 tp Unclamped Inductive Test Circuit Figure 13a D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ingle P uls e 0.01 0.00001 0.0001 F igure 14. Normalized T ...
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STB/P8444 PACKAGE OUTLINE DIMENSIONS TO-220 6 Ver 1.0 Mar,26,2008 www.samhop.com.tw ...
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STB/P8444 PACKAGE OUTLINE DIMENSIONS TO-263AB 7 Ver 1.0 Mar,26,2008 www.samhop.com.tw ...
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STB/P8444 TO-220/263AB Tube 17.5 5.40 0. ANTISTATIC 1.70 + 7.67 0.20 5. 536 1 8 Ver 1.0 + 5.4 0.2 + 3.5 0.2 + 2.6 0.2 + 0.5 0.1 5.10 4.30 Mar,26,2008 www.samhop.com.tw ...