sii100n12 Sirectifier Semiconductors, sii100n12 Datasheet
sii100n12
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sii100n12 Summary of contents
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... C, t =1ms CRM GES P tot < Vj, stg OPERATION stg AC, 1min V isol R thJC R thJCD SII100N12 NPT IGBT Modules Conditions Dimensions in mm (1mm = 0.0394" unless otherwise specified C Units Values 1200 V 145(100) A 290(200 +20 V 700 40...+125(150) ...
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... I =100A 600V 100A 0V di/dt= 1000A/us 25(125) j Mechanical Data M to heatsink terminals SII100N12 NPT IGBT Modules Conditions o = 25(125 25(125) C; chip level 125 25(125 =0V,di/dt= 1000A/us,T = 125 600V ...
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... 150 ° 150 A 130 I 120 C 110 100 100 SII100N12 NPT IGBT Modules Safe operating area parameter 120 °C 160 ...
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... G E parameter µ 200 A 160 I C 140 120 100 SII100N12 T yp. output c harac teris tic parameter µ 200 A 17V 15V 160 I 13V C 11V 9V 140 7V 120 100 80 60 ...
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... T = 150°C C puls parameter 2 puls C 1.5 1.0 0.5 0.0 0 200 400 600 800 1000 1200 SII100N12 NPT IGBT Modules T yp. c apac itanc parameter MHz 800 700 0 ...
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... C j par 600 ± mWs 100 150 SII100N12 T yp. s witc hing time inductive load , 6.8 par 600 tdoff tdon 250 ...
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... F orward c harac teris tic s of fas t rec overy I = f(V ) revers e diode F F parameter 200 A 160 I F 140 120 T =125°C j 100 0.0 0.5 1.0 1.5 2.0 SII100N12 NPT IGBT Modules Transient thermal impedance parameter K/W Z thJC - =25° single pulse - 3.0 ...