sii100n12 Sirectifier Semiconductors, sii100n12 Datasheet - Page 3

• Manufacturer Part Number: sii100n12
• Description: Npt Igbt Modules
• Manufacturer: Sirectifier Semiconductors

Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
C
tot
I
tot
C
= (T
= (T
750
650
600
550
500
450
400
350
300
250
200
150
100
150
130
120
110
100
W
50
90
80
70
60
50
40
30
20
10
A
0
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
NPT IGBT Modules
120
120
SII100N12
T
T
°C
°C
C
C
160
160
Safe operating area
I
parameter: D = 0, T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= (V
K/W
10
10
10
10
10
10
10
10
10
10
= (t
A
-1
-1
-2
-3
-4
3
2
1
0
0
CE
10
10
0
-5
)
p
)
single pulse
10
p
10
-4
/ T
1
C
= 25°C , T
10
-3
S
10
2
irectifier
10
j
-2
IGBT
DC
150 °C
t
10
p = 16.0µs
D = 0.50
10
3
100 µs
1 ms
10 ms
V
t
-1
p
0.20
0.10
0.05
0.02
0.01
CE
V
s
10
0
R