sii150n12 Sirectifier Semiconductors, sii150n12 Datasheet
sii150n12
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sii150n12 Summary of contents
Page 1
... C, t =1ms CRM GES P tot < Vj, stg OPERATION stg AC, 1min V isol R thJC R thJCD SII150N12 NPT IGBT Modules Conditions Dimensions in mm (1mm = 0.0394" unless otherwise specified C Units Values 1200 V 210(150) A 420(300 +20 V 1250 40...+125(150) ...
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... I =150A 600V 150A 0V di/dt= 1500A/us 25(125) j Mechanical Data M to heatsink terminals SII150N12 NPT IGBT Modules Conditions o = 25(125 25(125) C; chip level 125 25(125 =0V,di/dt= 1500A/us,T = 125 600V ...
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... C parameter 150 ° 240 A 200 I C 180 160 140 120 100 100 120 SII150N12 Safe operating area parameter °C 160 Transient thermal impedance ...
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... SII150N12 NPT IGBT Modules T yp. output c harac teris tic parameter µ ° 300 A 260 17V 15V I 240 13V C 11V 220 9V 7V 200 180 160 140 120 100 yp. trans fer c harac teris tic s ...
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... T = 150°C C puls parameter 2 puls C 1.5 1.0 0.5 0.0 0 200 400 600 800 1000 1200 SII150N12 NPT IGBT Modules T yp. c apac itanc parameter MHz 800 800 nC 1100 0 ...
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... C j par 600 ± 120 mWs 100 150 200 250 300 SII150N12 T yp. s witc hing time inductive load , 5.6 par 600 tdoff tdon ...
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... I = f(V ) revers e diode F F parameter 300 A 260 I 240 F 220 200 180 T =125°C j 160 140 120 100 0.0 0.5 1.0 1.5 2.0 SII150N12 Transient thermal impedance parameter K/W Z thJC - =25° single pulse - 3 Diode ...