sii150n12 Sirectifier Semiconductors, sii150n12 Datasheet - Page 7

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sii150n12

Manufacturer Part Number
sii150n12
Description
Npt Igbt Modules
Manufacturer
Sirectifier Semiconductors
Datasheet
F orward c harac teris tic s of fas t rec overy
revers e diode
parameter: T
I
F
300
260
240
220
200
180
160
140
120
100
80
60
40
20
A
0
0.0
j
0.5
I
F
= f(V
1.0
F
T
)
j
=125°C
1.5
2.0
NPT IGBT Modules
SII150N12
T
j
=25°C
V
V
F
3.0
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
= (t
-1
-2
-3
-4
0
10
-5
p
)
single pulse
10
p
-4
/ T
10
-3
S
10
irectifier
-2
Diode
D = 0.50
10
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0
R

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