flk027xp Eudyna Devices Inc, flk027xp Datasheet

flk027xp

Manufacturer Part Number

flk027xp

Description

Gaas Hemt Chips

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLK027XP.pdf (4 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FLK027XP

Manufacturer:

Eudyna

Quantity:

5 000

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Edition 1.3

July 1999

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25 C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 C)

Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)

FEATURES

• High Output Power: P 1dB = 24.0dBm(Typ.)

• High Gain: G 1dB = 7.0dB(Typ.)

• High PAE: add = 32%(Typ.)

• Proven Reliability

DESCRIPTION

The FLK027XP, and FLK027XV chip is a power GaAs FET that is

designed for general purpose applications in the Ku-Band frequency

range as it provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB

Gain Compression Point

Power Gain at 1dB

Gain Compression Point

Power-added Efficiency

The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145 C.

gate resistance of 2000 .

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

R th

Symbol

g m

V p

add

V GS

V DS

T stg

P tot

T ch

Channel to Case

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 65mA

V DS = 5V, I DS = 5mA

I GS = -5 A

V DS = 10V

I DS

f = 14.5GHz

Test Conditions

0.6I DSS

T c = 25 C

FLK027XP, FLK027XV

Condition

GaAs FET & HEMT Chips

Min.

-1.0

-5

-65 to +175

Rating

1.88

Limit

Typ.

100

-2.0

175

-5

Source

Max.

150

-3.5

Drain

Gate

Source

dBm

Unit

C/W

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flk027xp Summary of contents

Page 1

... High PAE: add = 32%(Typ.) • Proven Reliability DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance ...

Page 2

... FLK027XP, FLK027XV GaAs FET & HEMT Chips POWER DERATING CURVE 100 150 Case Temperature ( C) OUTPUT POWER vs. INPUT POWER V DS =10V 0.6I DSS f = 14.5GHz 22 P out 20 18 add Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 100 ...

Page 3

... NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.2mm length, 25µm Dia Au wire) Drain n=1 (0.2mm length, 25µm Dia Au wire) Source n=4 (0.3mm length, 25µm Dia Au wire) Download S-Parameters, click here FLK027XP, FLK027XV S-PARAMETERS 10V 60mA S12 S22 FREQUENCY (MHZ) MAG ANG ...

Page 4

... FLK027XP, FLK027XV GaAs FET & HEMT Chips FLK027XP 50 (Unit: m) Drain Source Source Gate 330 30 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division ...

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