flk027xp Eudyna Devices Inc, flk027xp Datasheet - Page 4

• Manufacturer Part Number: flk027xp
• Description: Gaas Hemt Chips
• Manufacturer: Eudyna Devices Inc

FLK027XP, FLK027XV
GaAs FET & HEMT Chips
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Source
70
FLK027XP
330 30
Drain
Gate
50
50
Source
70
(Unit: m)
Source electrodes are electrically
insulated from the bottom of the
chip (PHS)
Die Thickness: 60 20 m
CHIP OUTLINE
4
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
• Observe government laws and company regulations when discarding this
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Source
70
FLK027XV
330 30
Drain
Gate
50
50
Source
70
CAUTION
(Unit: m)
Source electrodes are
connected to the PHS
by Via-Hole
Die Thickness: 60 20 m
(Via-Hole)