DS1245ABP-100-IND DALLAS [Dallas Semiconductor], DS1245ABP-100-IND Datasheet - Page 5

• Manufacturer Part Number: DS1245ABP-100-IND
• Description: 1024k Nonvolatile SRAM
• Manufacturer: DALLAS [Dallas Semiconductor]

AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
Output High Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from
Output Active from
Data Setup Time
Data Hold Time
OE
CE
OE
to Output Valid
to Output Valid
or
CE
to Output Active
WE
WE
SYMBOL
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
ACC
t
WR1
WR2
t
COE
DH1
DH2
WC
AW
OD
OH
WP
RC
OE
CO
DS
(t
A
: See Note 10) (V
DS1245AB-100
MIN
DS1245Y-100
5 of 12
100
100
75
15
40
10
5
5
0
5
5
0
MAX
100
100
50
35
35
(V
DS1245AB-120
MIN
DS1245Y-120
CC
120
120
CC
90
15
50
10
5
5
0
5
5
0
=5V =5% for DS1245AB)
=5V =10% for DS1245Y)
MAX
120
120
60
35
35
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS1245Y/AB
12
13
12
13
5
5
3
5
5
4