DS1245ABP-100-IND DALLAS [Dallas Semiconductor], DS1245ABP-100-IND Datasheet - Page 8

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DS1245ABP-100-IND

Manufacturer Part Number
DS1245ABP-100-IND
Description
1024k Nonvolatile SRAM
Manufacturer
DALLAS [Dallas Semiconductor]
Datasheet
POWER-DOWN/POWER-UP TIMING
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
2.
3. t
4. t
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the
7. If the
8. If
9. Each DS1245 has a built-in switch that disconnects the lithium source until V
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
11. In a power-down condition the voltage on any pin may not exceed the voltage on V
12. t
13. t
14. DS1245 DIP modules are recognized by Underwriters Laboratory (U.L. ) under file E99151.
PARAMETER
V
V
PARAMETER
Expected Data Retention Time
CE
CE
CC
CC
going low to the earlier of
buffers remain in a high impedance state during this period.
buffers remain in high impedance state during this period.
the output buffers remain in a high impedance state during this period.
user. The expected t
power is first applied by the user.
commercial products, this range is 0 C to 70 C. For industrial products (IND), this range is -40 C to
+85 C.
DS1245 PowerCap modules are pending U.L. review. Contact the factory for status.
OE
WE
WP
DH
WR1
WR2
,
,
slew from V
slew from 0V to V
WE
WE
WE
, t
is specified as the logical AND of
= V
is high for a Read Cycle.
and t
and t
DS
CE
at V
at V
CE
is low or the
are measured from the earlier of
IH
DH1
DH2
or V
low transition occurs simultaneously with or latter than the
high transition occurs prior to or simultaneously with the
IH
IH
before Power-Down
after Power-Up
are measured from
are measured from
TP
IL
. If
to 0V (
OE
TP
DR
WE
(
is defined as accumulative time in the absence of V
= V
CE
CE
low transition occurs prior to or simultaneously with the
CE
IH
at V
at V
during write cycle, the output buffers remain in a high impedance state.
or
IH
IH
CE
WE
WE
)
)
going high.
going high.
going high.
SYMBOL
SYMBOL
CE
CE
t
t
t
REC
or
and
t
t
DR
PD
R
F
WE
8 of 12
WE
going high.
. t
MIN
MIN
300
300
WP
10
0
2
is measured from the latter of
TYP
TYP
WE
WE
MAX
MAX
125
high transition, the output
low transition, the output
CC
CC
starting from the time
(t
is first applied by the
A
UNITS
UNITS
: See Note 10)
CC
CE
years
ms
.
s
s
s
low transition,
(t
DS1245Y/AB
CE
A
NOTES
=25 C)
NOTES
or
11
9
WE

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