74HCT3G04GD,125 NXP Semiconductors, 74HCT3G04GD,125 Datasheet

IC INVERTER SI-GATE CMOS 8-XSON

74HCT3G04GD,125

Manufacturer Part Number
74HCT3G04GD,125
Description
IC INVERTER SI-GATE CMOS 8-XSON
Manufacturer
NXP Semiconductors
Series
74HCTr
Datasheet

Specifications of 74HCT3G04GD,125

Number Of Circuits
3
Logic Type
Inverter
Package / Case
8-XSON
Number Of Inputs
1
Current - Output High, Low
4mA, 4mA
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Logic Family
HCT
High Level Output Current
- 4 mA
Low Level Output Current
4 mA
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
74HCT3G04GD-G
74HCT3G04GD-G
935286849125
1. General description
2. Features
3. Ordering information
Table 1.
Type number
74HC3G04DP
74HCT3G04DP
74HC3G04DC
74HCT3G04DC
74HC3G04GD
74HCT3G04GD
Ordering information
Package
Temperature range Name
40 C to +125 C
40 C to +125 C
40 C to +125 C
The 74HC3G04 and 74HCT3G04 are high-speed Si-gate CMOS devices. They provide
three inverting buffers.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
I
I
I
I
I
I
I
I
74HC3G04; 74HCT3G04
Inverter
Rev. 03 — 2 July 2008
Wide supply voltage range from 2.0 V to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Multiple package options
ESD protection:
Specified from 40 C to +85 C and 40 C to +125 C
N
N
HBM JESD22-A114E exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
TSSOP8
VSSOP8
XSON8U
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
plastic very thin shrink small outline package; 8 leads;
body width 2.3 mm
plastic extremely thin small outline package; no leads;
8 terminals; UTLP based; body 3
2
0.5 mm
Product data sheet
Version
SOT505-2
SOT765-1
SOT996-2

Related parts for 74HCT3G04GD,125

74HCT3G04GD,125 Summary of contents

Page 1

Inverter Rev. 03 — 2 July 2008 1. General description The 74HC3G04 and 74HCT3G04 are high-speed Si-gate CMOS devices. They provide three inverting buffers. The HC device has CMOS input switching levels and supply voltage range 2 V ...

Page 2

... NXP Semiconductors 4. Marking Table 2. Marking codes Type number 74HC3G04DP 74HCT3G04DP 74HC3G04DC 74HCT3G04DC 74HC3G04GD 74HCT3G04GD 5. Functional diagram mna720 Fig 1. Logic symbol 6. Pinning information 6.1 Pinning 74HC3G04 74HCT3G04 GND 001aai257 Fig 4. Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8) 74HC_HCT3G04_3 Product data sheet 74HC3G04 ...

Page 3

... NXP Semiconductors 6.2 Pin description Table 3. Pin description Symbol Pin 1A, 2A GND 4 1Y, 2Y Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). ...

Page 4

... NXP Semiconductors 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC V input voltage I V output voltage O T ambient temperature amb t/ V input transition rise and fall rate 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V) ...

Page 5

... NXP Semiconductors Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). All typical values are measured at T Symbol Parameter Conditions C input I capacitance 74HCT3G04 V HIGH-level input voltage V LOW-level input voltage V HIGH-level output voltage 4.0 mA LOW-level output voltage 4.0 mA input leakage ...

Page 6

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); all typical values are measured at T Symbol Parameter Conditions 74HCT3G04 t propagation nA to nY; see pd delay transition V = 4.5 V; see t CC time C power V = GND dissipation capacitance [ the same as t and PLH PHL ...

Page 7

... NXP Semiconductors negative positive Test data is given in Table Definitions for test circuit Termination resistance should be equal to output impedance Load capacitance including jig and probe capacitance Load resistance Test selection switch. Fig 7. Load circuit for measuring switching times Table 10. Test data Type ...

Page 8

... NXP Semiconductors 13. Package outline TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0.95 mm 1.1 0.25 0.00 0.75 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. ...

Page 9

... NXP Semiconductors VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT max. 0.15 0. 0.12 0.00 0.60 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. ...

Page 10

... NXP Semiconductors XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 0.5 mm terminal 1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.05 0.35 2.1 mm 0.5 0.00 0.15 1.9 OUTLINE VERSION IEC SOT996 Fig 10. Package outline SOT996-2 (XSON8U) ...

Page 11

... Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Added type number 74HC3G04GD and 74HCT3G04GD (XSON8U package). ...

Page 12

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 14 Abbreviations ...

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