74AUP1G38GM,115 NXP Semiconductors, 74AUP1G38GM,115 Datasheet - Page 9
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74AUP1G38GM,115
Manufacturer Part Number
74AUP1G38GM,115
Description
IC NAND GATE 2-IN 6-XSON
Manufacturer
NXP Semiconductors
Series
74AUPr
Datasheet
1.74AUP1G38GF132.pdf
(18 pages)
Specifications of 74AUP1G38GM,115
Number Of Circuits
1
Package / Case
6-XSON (Micropak™), SOT-886
Logic Type
NAND Gate with Open Drain
Number Of Inputs
2
Current - Output High, Low
4mA, 4mA
Voltage - Supply
0.8 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Logic Family
AUP
Low Level Output Current
4 mA
Propagation Delay Time
19.5 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
0.8 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
74AUP1G38GM-G
74AUP1G38GM-G
935279032115
74AUP1G38GM-G
935279032115
NXP Semiconductors
Table 10.
[1]
74AUP1G38
Product data sheet
Supply voltage
V
0.8 V to 3.6 V
Fig 8.
CC
For measuring enable and disable times R
Test data is given in
Definitions for test circuit:
R
C
R
V
Test circuit for measuring switching times
L
L
T
EXT
Test data
= Load resistance.
= Load capacitance including jig and probe capacitance.
= Termination resistance should be equal to the output impedance Z
= External voltage for measuring switching times.
Load
C
5 pF, 10 pF, 15 pF and 30 pF
L
Table
10.
L
All information provided in this document is subject to legal disclaimers.
G
= 5 kΩ, for measuring propagation delays, setup and hold times and pulse width R
V I
Rev. 4 — 7 October 2010
R T
R
5 kΩ or 1 MΩ
L
DUT
V
[1]
CC
V O
Low-power 2-input NAND gate (open drain)
C L
o
001aac521
of the pulse generator.
V
t
open
V
PLH
EXT
EXT
5 kΩ
R L
, t
PHL
t
GND
PZH
74AUP1G38
, t
PHZ
© NXP B.V. 2010. All rights reserved.
t
2 × V
PZL
, t
CC
PLZ
L
= 1 MΩ.
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