FGA90N33ATD_11 FAIRCHILD [Fairchild Semiconductor], FGA90N33ATD_11 Datasheet

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FGA90N33ATD_11

Manufacturer Part Number
FGA90N33ATD_11
Description
330V, 90A PDP Trench IGBT
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©2011 Fairchild Semiconductor Corporation
FGA90N33ATD Rev. C0
Absolute Maximum Ratings
Thermal Characteristics
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
FGA90N33ATD
330V, 90A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
*I
V
V
I
I
I
P
T
T
T
R
R
R
C
C pulse(1)
C pulse(2)
C
stg
J
L
CES
GES
D
θJC
θJC
θJA
pluse limited by max Tj
Symbol
Symbol
(IGBT)
(Diode)
G C E
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
=1.1V @ I
TO-3P
Description
Parameter
C
= 20A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 25
= 25
= 25
= 100
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
o
o
o
o
C
C
C
C
o
C
Typ.
G
-
-
-
-55 to +150
-55 to +150
Ratings
± 30
330
220
330
223
300
90
89
Max.
0.56
1.16
40
C
E
August 2011
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C

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