FGA90N33ATD_11 FAIRCHILD [Fairchild Semiconductor], FGA90N33ATD_11 Datasheet - Page 4

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FGA90N33ATD_11

Manufacturer Part Number
FGA90N33ATD_11
Description
330V, 90A PDP Trench IGBT
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
FGA90N33ATD Rev. C0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
160
120
160
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
40
80
40
0
0
25
0
0
T
Common Emitter
V
T
T
Common Emitter
V
Temperature at Variant Current Level
C
GE
C
C
Collector-EmitterCase Temperature, T
GE
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
o
Collector-Emitter Voltage, V
C
C
o
1
C
50
15V
12V
1
20V
2
75
2
10V
3
I
C
90A
40A
= 20A
V
9V
GE
100
CE
8V
3
7V
CE
= 6V
[V]
4
[V]
C
[
o
C
]
125
4
5
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
160
120
160
120
80
40
80
40
20
16
12
0
0
8
4
0
0
0
0
T
Common Emitter
V
T
T
C
C
C
CE
= 125
= 25
= 125
40A
= 20V
I
C
Collector-Emitter Voltage, V
o
2
o
C
1
o
= 20A
C
4
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
10V
12V
15V
20V
4
2
8
90A
6
9V
3
12
Common Emitter
T
8V
8
C
GE
GE
V
= 25
7V
GE
CE
[V]
[V]
= 6V
o
4
[V]
16
C
10
GE
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12
5
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