FQB6N40C FAIRCHILD [Fairchild Semiconductor], FQB6N40C Datasheet
FQB6N40C
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FQB6N40C Summary of contents
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... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25°C) C Parameter QFET = 1 DS(on " " ! " ! " " " " " FQB6N40C/FQI6N40C Units 400 3 270 7.3 mJ 4.5 V/ 0.58 W/°C -55 to +150 °C 300 °C Typ Max Units -- 1.71 ° ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS / T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...
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Typical Characteristics V GS Top : 15.0 V 10 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5 Drain-Source Voltage [V] DS ...
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Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs Temperature 2 10 Operation in This Area is Limited by R DS(on 100 ms 0 ...
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3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & ...
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Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( ...
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Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 ...
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Package Dimensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation (Continued PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Dimensions in Millimeters Rev. A, August ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...