FQB6N40C FAIRCHILD [Fairchild Semiconductor], FQB6N40C Datasheet - Page 3

• Manufacturer Part Number: FQB6N40C
• Description: 400V N-Channel MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1200
1000
10
10
10
800
600
400
200
-1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
0
10
0
10
Figure 5. Capacitance Characteristics
-1
0
Figure 3. On-Resistance Variation vs
Top :
Bottom : 5.0 V
-1
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
DS
5
V
, Drain-Source Voltage [V]
DS
, Drain-Source Voltage [V]
10
10
0
I
0
D
, Drain Current [A]
C
C
C
oss
iss
rss
V
10
GS
= 10V
C
C
C
iss
oss
rss
= C
= C
= C
gs
gd
ds
+ C
+ C
10
10
※ Notes :
1. 250 μ s Pulse Test
2. T
1
V
1
gd
gd
GS
15
C
※ Note : T
(C
= 25 ℃
1. V
2. f = 1 MHz
= 20V
Notes ;
ds
= shorted)
GS
= 0 V
J
= 25 ℃
20
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
o
Variation with Source Current
C
0.4
150
150℃
o
C
5
4
V
DS
V
V
and Temperature
Q
V
GS
SD
= 320V
0.6
DS
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
= 200V
DS
25℃
= 80V
-55
o
C
0.8
10
6
1.0
※ Notes :
1. V
2. 250 μ s Pulse Test
※ Notes :
DS
1. V
2. 250 μ s Pulse Test
※ Note : I
15
8
= 40V
GS
= 0V
1.2
D
= 6A
Rev. A, August 2003
10
1.4
20